document number: 81134 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 1 silicon npn phototransistor vemt2500x01, vemt2520x01 vishay semiconductors description vemt2500x01 series are silicon npn epitaxial planar phototransistors in a miniat ure dome lens, clear epoxy package for surface mounting. the device is sensitive to visible and near infrared radiation. features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? aec-q101 qualified ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 15 ? package matched with ir emitter series vsmb2000x01 ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? detector in automotive applications ? photo interrupters ? miniature switches ? counters ?encoders ? position sensors note ? test condition see table basic characteristics note ? moq: minimum order quantity 16758-10 vemt2500x01 vemt2520x01 product summary component i ca (ma) ? (deg) ? 0.1 (nm) vemt2500x01 6 15 470 to 1090 vemt2520x01 6 15 470 to 1090 ordering information ordering code packaging remarks package form vemt2500x01 tape and reel moq: 6000 pcs, 6000 pcs/reel reverse gullwing vemt2520x01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 20 v emitter collec tor voltage v eco 7v collector current i c 50 ma power power dissipation t amb ? 75 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81134 2 rev. 1.1, 21-feb-11 vemt2500x01, vemt2520x01 vishay semiconductors silicon npn phototransistor fig. 1 - power dissipation limit vs. ambient temperature storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 250 k/w absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21619 r thja = 250 k/w t amb - ambient temperature (c) p v - power dissipation (mw) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 20 v collector dark current v ce = 5 v, e = 0 i ceo 1 100 na collector emitte r capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 25 pf collector light current e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v i ca 369ma angle of half sensitivity ? 15 deg wavelength of peak sensitivity ? p 850 nm range of spectral bandwidth ? 0.1 470 to 1090 nm collector emitter sa turation voltage i c = 0.05 ma v cesat 0.4 v temperature coefficient of i ca e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v tk ica 1.1 %/k
document number: 81134 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 3 vemt2500x01, vemt2520x01 silicon npn phototransistor vishay semiconductors basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - collector dark current vs. ambient temperature fig. 3 - collector ligh t current vs. irradiance fig. 4 - rise/fall time vs. collector current fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement fig. 7 - relative collector current vs. ambient temperature 1 10 100 1000 10 000 0 102030405060708090100 t amb - ambient temperature (c) i ce0 - collector dark current (na) i f = 0 v ce = 70 v v ce = 25 v v ce = 5 v 20594 i ca - collector light current (ma) e e - irradiance (mw/cm2) 21573 0.01 0.1 1 10 100 0.01 0.1 1 10 v ce = 5 v, = 950 nm 0 10 20 30 40 50 60 70 80 90 100 0 250 500 750 1000 1250 1500 1750 2000 i c - collector current (a) t r /t f - rise/fall time (s) t f t r 20599 r l = 100 0 0.2 0.4 0.6 0.8 1.0 1.2 400 500 600 700 800 900 1000 1100 21555 - wavelength (nm) s ( ) rel - relative spectral sensitivity s rel - relative sensitivity 94 8248 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 0 0.2 0.4 ? - angular displacement 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t amb - ambient temperature (c) i ca rel - relative collector current v ce = 5 v e e = 1 mw/cm 2 = 950 nm
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81134 4 rev. 1.1, 21-feb-11 vemt2500x01, vemt2520x01 vishay semiconductors silicon npn phototransistor reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 2a, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions vemt2500x01 in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c 21570 2.2 5.8 0.2 2.77 0.2 2.3 0.2 collector 0.5 0.05 0.1 0.254 1.1 0.1 emitter pin id 0.4 2.2 0 . 1 9 0.3 1.6 0.4 ? 1.8 0.1 2.3 0.2 specifications according to din technical drawings not indicated to lerances 0.1 drawing-no.: 6.544-5391.01-4 issue: 1; 26.09.08 exposed copper 0.75 6.7 1.7 ? 2.3 0.1 solder pad proposal acc. ipc 7351 z 20:1
document number: 81134 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 5 vemt2500x01, vemt2520x01 silicon npn phototransistor vishay semiconductors package dimensions vemt2520x01 in millimeters 2.2 4.2 0.2 2.77 0.2 2.3 0.2 collector 0.5 0.05 0.254 0.6 emitter 0.4 2.2 0 . 1 9 0.3 1.6 0.4 ? 1.8 2.3 0.2 not indicated tolerances 0.1 drawing-no.: 6.544-5383.01-4 issue: 4; 28.01.09 0.75 2.45 5.15 exposed copper solder pad proposal acc. ipc 7351 21569 technical drawings according to din specifications pin id
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81134 6 rev. 1.1, 21-feb-11 vemt2500x01, vemt2520x01 vishay semiconductors silicon npn phototransistor tape and reel dimensions vemt2500x01 in millimeters issue: 2; 18.03.10 drawing-no.: 9.800-5100.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical drawings according to din specifications terminal position in tape devicce vemd2000 vemd2500 cathode anode anode cathode vsmb2000 vsmg2000 vsmy2850rg vemt2000 vemt2500 collector emitter lead i lead ii
document number: 81134 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 7 vemt2500x01, vemt2520x01 silicon npn phototransistor vishay semiconductors tape and reel dimensions vemt2520x01 in millimeters drawing-no.: 9.800-5091.01-4 leader and trailer tape: parts mounted empty (400 mm min.) empty (160 mm min.) direction of pulling out unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 label posted here coming out from reel tape position x ? 13 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 21571 technical drawings according to din specifications issue: 3; 18.03.09 terminal position in tape devicce vsmb2020 vsmg2020 cathode anode anode cathode vemd2020 vemd2520 vsmy2850g vemt2020 vemt2520 collector emitter lead i lead ii
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